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| TGC4405-SM 17 - 27 GHz Packaged Upconverter Key Features * * * * * * * RF Output Frequency Range: 17 - 27 GHz LO Input Frequency Range: 8 - 13 GHz IF Input Frequency Range: 0.5 - 3 GHz 13 dB Conversion Gain 28 dBm OTOI Bias: Vd = 5 V, Idq = 425 mA Package Dimensions: 4 x 4 x 0.9 mm Measured Performance Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO Primary Applications * * Point-to-Point Radio K Band Sat-Com 20 18 16 14 12 10 8 6 4 2 0 Conversion Gain (dB) Product Description Upper Side Band Lower Side Band The TriQuint TGC4405-SM is an upconverter with RF output frequencies of 17 to 27 GHz. It contains a frequency doubler and local oscillator (LO) amplifier, operating at LO input frequencies of 8 - 13 GHz. The TGC4405-SM is in a compact 4 mm x 4 mm package footprint. The TGC4405-SM nominally provides 13 dB conversion gain and 28 dBm OTOI when operated with LO inputs from 2 - 5 dBm. The TGC4405-SM is ideally suited for low cost markets such as Point-to-Point Radio, and K-band Sat-Com. The TGC4405-SM has a protective surface passivation layer on the MMIC providing environmental robustness. Lead-free and RoHS compliant. 17 18 19 20 21 22 23 24 25 26 27 RF Output Frequency (GHz) Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz +/- 5MHz @ -8dBm Input/Tone, +2dBm LO 34 32 30 28 26 24 22 20 18 16 14 OTOI (dBm) Upper Side Band Lower Side Band 17 18 19 20 21 22 23 24 25 26 27 RF Output Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vmxr Vdbl Vg Id Ig Imxr Idbl PinLO PinIF Parameter Drain to Gate Voltage Drain Supply Voltage Mixer Supply Voltage Range Doubler Supply Voltage Range Gate Supply Voltage Range Drain Supply Current Gate Supply Current Range Mixer Supply Current Range Doubler Supply Current Range LO Input Continuous Wave Power IF Input Continuous Wave Power Value 12 V 8V -5 to 0 V -5 to 0 V -5 to 0 V 817 mA -3.3 to 56.7 mA -0.75 to 10.5 mA -0.6 to 16.8 mA 18 dBm 21 dBm Notes 2/ 2/ 2/ 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed Pd (as listed in "Thermal Information"). 2/ Table II Recommended Operating Conditions Symbol Vd Idq Vg Vmxr Vdbl Drain Voltage Drain Current Gate Voltage Mixer Voltage Doubler Voltage Parameter Value 5V 425 mA -0.5 V, typical -0.9 V -0.9 V See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Table III RF Characterization Table Bias: Vd = 5 V, Idq = 425 mA, Vmxr = Vdbl = -0.9V, Vg = -0.5V Typical SYMBOL FLO FIF Gain ORL OTOI PARAMETER LO Input Frequency Range IF Input Frequency Range Conversion Gain Output Return Loss Output Third Order Intercept @ IF Input = -8dBm/Tone TEST CONDITIONS NOMINAL 8 - 13 0.5 - 3 UNITS GHz GHz dB dB dBm f = 17 - 27 GHz f = 17 - 27 GHz f = 17 - 27 GHz 13 -10 28 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Table IV Power Dissipation and Thermal Properties Parameter Maximum Power Dissipation Test Conditions Tbase = 70 C Value Pd = 2.9 W Tchannel = 150 C Tm = 1.0E+6 Hrs jc = 27.4 (C/W) Tchannel = 128 C Tm = 7E+6 Hrs 320 C -65 to 150 C Notes 1/ 2/ Thermal Resistance, jc Vd = 5 V Id = 425 mA Pd = 2.13 W 30 Seconds Mounting Temperature Storage Temperature 1/ For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 C - Tbase C)/jc. 2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. Tbase is defined @ package pin # 17 (ground) 2/ Power De-rating Curve 7 6 Power Dissipated (W) 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 175 Baseplate Temp (C) Tm= 1.0E+6 Hrs 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Measured Data 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 14 15 16 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO Conversion Gain (dB) Upper Side Band Lower Side Band 17 18 19 20 21 22 23 24 25 26 27 28 RF Output Frequency (GHz) 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 14 15 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz +/- 5MHz @ -8dBm Input/Tone, +2dBm LO OTOI (dBm) Upper Side Band Lower Side Band 16 17 18 19 20 21 22 23 24 25 26 27 28 5 RF Output Frequency (GHz) TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Measured Data Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, +2dBm LO 1x LO Frequency 2x LO Frequency 3x LO Frequency 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 8 Output Power (dBm) 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 LO Frequency (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Measured Data Swept LO Power Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -8dBm, LO Frequency = 10GHz 14 13 Conversion Gain (dB) 12 11 10 9 8 0 0.5 Upper Side Band Lower Side Band 1 1.5 2 2.5 3 LO Power (dBm) 3.5 4 4.5 5 Swept IF @ -8dBm Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V LO Frequency = 10GHz, +2dBm LO 16 14 Conversion Gain (dB) 12 10 8 6 4 2 0 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 IF Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev Upper Side Band Lower Side Band TGC4405-SM Measured Data 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 17 18 Vd = 5V vs. 4V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -5dBm, +2dBm LO USB Conversion Gain (dB) 4V, 425mA 5V, 425mA 19 20 21 22 23 24 25 26 27 28 29 30 RF Output Frequency (GHz) Vd = 5V vs. 4V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -5dBm, +2dBm LO 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 14 15 LSB Conversion Gain (dB) 4V, 425mA 5V, 425mA 16 17 18 19 20 21 22 23 24 25 26 27 RF Output Frequency (GHz) 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Measured Data 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 14 15 Vd = 5V vs. 4V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -5dBm, +2dBm LO LSB OTOI (dBm) 4V, 425mA 5V, 425mA 16 17 18 19 20 21 22 23 24 25 26 27 RF Output Frequency (GHz) Vd = 5V vs. 4V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -5dBm, +2dBm LO 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 17 18 USB OTOI (dBm) 4V, 425mA 5V, 425mA 19 20 21 22 23 24 25 26 27 28 29 30 RF Output Frequency (GHz) 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Measured Data 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 17 18 19 Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -5dBm, +2dBm LO USB Conversion Gain (dB) -40C +25C +70C 20 21 22 23 24 25 26 27 28 29 30 RF Output Frequency (GHz) Vd = 5V, Idq = 425mA, Vmxr = Vdbl = -0.9V IF = 2GHz @ -5dBm, +2dBm LO 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 14 15 16 LSB Conversion Gain (dB) -40C +25C +70C 17 18 19 20 21 22 23 24 25 26 27 RF Output Frequency (GHz) 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Electrical Schematic 100 pF 0.01 uF 1 uF Vd Pin 12 Resistive FET Mixer + Baluns Pin 14 100 pF 1 uF Vmxr RF Amplifier Pin 16 Pin 13 Pin 8 15 1 uF IF In Pin 10 Pin 2 RF Out Vg 2xLO Buffer 100 pF Doubler Pin 7 TGC4405-SM Pin 5 100 pF 1 uF Vdbl LO In Bias Procedures Bias-up Procedure *Vg set to -1.5 V *Vmxr set to -0.9V *Vdbl set to -0.9 V *Vd set to +5 V *Adjust Vg more positive until Idq is 425 mA. This will be ~ Vg = -0.5 V *Apply signals to LO and IF input 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - Bias-down Procedure *Turn off signals *Turn Vd to 0V *Turn Vdbl to 0V *Turn Vmxr to 0V *Turn Vg to 0V TGC4405-SM Package Pinout PIN #1 IDENTIFICATION PIN #1 DOT 13 12 11 10 9 8 14 15 16 17 1 18 2 3 4 7 6 5 TOP VIEW BOTTOM VIEW Pin 1, 3, 4, 6, 9, 11, 15, 17, 18 2 5 7 8, 13 10, 14 12 16 Description Gnd IF In LO In Vdbl Vg Vd Vmxr RF Out 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Mechanical Drawing 18 Units: millimeters Thickness: 0.85 Pkg x,y size tolerance: +/- 0.050 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Recommended Assembly Diagram C5 C4 C7 C8 R3 R4 R2 R5 C2 R1 C1 C9 C6 C10 C3 Vg~-0.5V for Idq = 425mA Vd=5V NC Vx=Vmxr=Vdbl=-0.9V Vmxr and Vdbl are connected together Part C1, C2, C3 C4 C5, C6, C7, C8, C9, C10 R1, R2, R3, R4 R5 Description 1 uF Capacitor (0402) 0.01 uF Capacitor (0402) 100 pF Capacitor (0402) Jumper (0603) 15 ohm Resistor (0402) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - TGC4405-SM Assembly Notes Recommended Surface Mount Package Assembly * Proper ESD precautions must be followed while handling packages. * Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. * TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. * Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. * Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate SnPb 3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec Pb Free 3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec Ordering Information Part TGC4405-SM Package Style QFN 4x4 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 15 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com April 2007 (c) Rev - |
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